| PART |
Description |
Maker |
| DS1213D 1213D |
SmartSocket 256k/1M
From old datasheet system
|
MAXIM - Dallas Semiconductor
Dallas Semiconducotr
DALLAS[Dallas Semiconductor]
|
| DS1213B DS1213B01 |
SmartSocket 16k/64k
|
MAXIM - Dallas Semiconductor
|
| DS1213B 1213B |
From old datasheet system
SmartSocket 16k/64k
|
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| HYB514171BJ-50- Q67100-Q727 Q67100-Q2021 HYB514171 |
256k x 16-Bit Dynamic RAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| W27L02 W27L02P-70 W27L02P-90 W27L02Q-70 W27L02Q-90 |
256K X 8 ELECTRIC ALLY ERASABLE EPROM 256K X 8 EEPROM 12V, 70 ns, PQCC32
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| KM4132G512 |
256K x 32Bit x 2 Banks Synchronous Graphic RAM(256K x 32x 2组同步图RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| GS880V37AT-200I GS880V37AT-250 GS880V37AT-250I GS8 |
256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 3 ns, PQFP100
|
GSI Technology, Inc.
GSI[GSI Technology]
|
| T224162B T224162B-22 T224162B-25 T224162B-28 T2241 |
256K x 16 DYNAMIC RAM EDO PAGE MODE 256K × 16动态随机存储器EDO公司页面模式
|
Taiwan Memory Technolog...
TMT[Taiwan Memory Technology]
TM Technology, Inc.
|
| CY62146ELL-45ZSXA CY62146ELL-45ZSXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1041D-12ZSXE |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
